Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/nn1033967 (literal)

Alternative label

• Salfi, J; Paradiso, N; Roddaro, S; Heun, S; Nair, SV; Savelyev, IG; Blumin, M; Beltram, F; Ruda, HE (2011)
  Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals
  in ACS nano
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Salfi, J; Paradiso, N; Roddaro, S; Heun, S; Nair, SV; Savelyev, IG; Blumin, M; Beltram, F; Ruda, HE (literal)

Pagina inizio

• 2191 (literal)

Pagina fine

• 2199 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 5 (literal)

Rivista

• ACS nano (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Toronto, Ctr Nanotechnol, Toronto, ON M5S 3E4, Canada 2. CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy 3. Scuola Normale Super Pisa, I-56127 Pisa, Italy 4. Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada 5. Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada (literal)

Titolo

• Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals (literal)

Abstract

• We report a novel methocl for probing the gate-voltage dependence of the surface potential of individual semiconductor nanowires. The statistics of electronic occupation of a single defect on the surface of the nanowire, determined from a random telegraph signal, is used as a. measure for the local potential. The method, is demonstrated for the case of one or two switching defects in indium arsenide (InAs) nanowire field effect transistors at temperatures T = 25-77 K. Comparison with a self consistent model shows that surface potential variation is retarded In the conducting regime due to screening by surface states with density D(ss) approximate to 10(12) cm(-2) ev(-1). Temperature-dependent dynamics of, electron capture and emission producing the random telegraph signals are also analyzed, and multiphonon emission is identified as the process responsible for capture and emission of electrons from the surface traps. Two defects studied in detail had capture activation energies of E(B) approximate to 50 meV and E(B) approximate to 110 meV and cross sections of sigma(infinity) approximate to 3 x 10(-19) cm(2) and sigma(infinity) approximate to 2 x 10(-17) cm(2), respectively. A lattice relaxation energy of s (h) over bar omega = 187 +/- 15 meV was found for the first defect. (literal)

Prodotto di

• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)

Autore CNR

• NICOLA PARADISO (Persona)
• STEFANO RODDARO (Persona)
• FABIO BELTRAM (Persona)
• STEFAN HEUN (Persona)

Incoming links:

Autore CNR di

• STEFAN HEUN (Persona)
• STEFANO RODDARO (Persona)
• FABIO BELTRAM (Persona)
• NICOLA PARADISO (Persona)

Prodotto

• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ACS nano (Rivista)