Ultra-thin high-quality silicon nitride films on Si(111) (Articolo in rivista)

Type
Label
  • Ultra-thin high-quality silicon nitride films on Si(111) (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1209/0295-5075/94/16003 (literal)
Alternative label
  • Falta, J; Schmidt, T; Gangopadhyay, S; Clausen, T; Brunke, O; Flege, JI; Heun, S; Bernstorff, S; Gregoratti, L; Kiskinova, M (2011)
    Ultra-thin high-quality silicon nitride films on Si(111)
    in Europhysics letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Falta, J; Schmidt, T; Gangopadhyay, S; Clausen, T; Brunke, O; Flege, JI; Heun, S; Bernstorff, S; Gregoratti, L; Kiskinova, M (literal)
Pagina inizio
  • 16003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 94 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 94 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany 2. ELETTRA Synchrotron Light Source, I-34149 Trieste, Italy 3. CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy 4. Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
Titolo
  • Ultra-thin high-quality silicon nitride films on Si(111) (literal)
Abstract
  • Ultra-thin silicon nitride films grown by exposure of Si(111) substrates to a flux of atomic nitrogen at temperatures between 700 degrees C and 1050 degrees C have been investigated by means of X-ray spectromicroscopy, atomic force microscopy, X-ray reflectivity, and X-ray photoemission spectroscopy. The films show a Si(3)N(4) stoichiometry. For reactive nitride growth at temperatures below 800 degrees C, a smooth surface and interface morphology is found. Higher temperatures lead to the formation of rough films with holes and grooves of increasing size, approaching a lateral size of several hundred nanometers for growth temperatures above 900 degrees C. Nonetheless, X-ray spectromicroscopy shows that the bottom of the holes consists of Si(3)N(4). (literal)
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