Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1186/1556-276X-7-159 (literal)

Alternative label

• Viti, Leonardo; Vitiello, Miriam S.; Ercolani, Daniele; Sorba, Lucia; Tredicucci, Alessandro (2012)
  Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
  in Nanoscale research letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Viti, Leonardo; Vitiello, Miriam S.; Ercolani, Daniele; Sorba, Lucia; Tredicucci, Alessandro (literal)

Pagina inizio

• 159 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 7 (literal)

Rivista

• Nanoscale research letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Ist Nanosci Consiglio Nazl Ric CNR, NEST, I-56127 Pisa, Italy Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)

Titolo

• Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors (literal)

Abstract

• We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 10(3) to 10(4) cm(2)/(V x sec) by varying the ditertiarybutyl selenide (DtBSe) precursor line pressure from 0 to 0.4 Torr, leading to an increase of the carrier density in the transistor channel of more than two orders of magnitude. By keeping the DtBSe line pressure at 0.1 Torr, the carrier density in the nanowire channel measures a parts per thousand 5 x 10(17) cm(-3) ensuring the best peak transconductances (> 100 mS/m) together with very low resistivity values (70 Omega x mu m) and capacitances in the attofarad range. These results are particularly relevant for further optimization of the nanowire-FET terahertz detectors recently demonstrated. (literal)

Prodotto di

• Nanofotonica (MD.P06.020.002) (Modulo)

Autore CNR

• DANIELE ERCOLANI (Unità di personale esterno)
• ALESSANDRO TREDICUCCI (Unità di personale interno)
• LUCIA SORBA (Unità di personale interno)
• MIRIAM SERENA VITIELLO (Unità di personale interno)

Incoming links:

Autore CNR di

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• LUCIA SORBA (Unità di personale interno)
• ALESSANDRO TREDICUCCI (Unità di personale interno)
• DANIELE ERCOLANI (Unità di personale esterno)

Prodotto

• Nanofotonica (MD.P06.020.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanoscale research letters (Rivista)