http://www.cnr.it/ontology/cnr/individuo/prodotto/ID190320
Contacts shielding in nanowire field effect transistors (Articolo in rivista)
- Type
- Label
- Contacts shielding in nanowire field effect transistors (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3693027 (literal)
- Alternative label
Pitanti, Alessandro; Roddaro, Stefano; Vitiello, Miriam S.; Tredicucci, Alessandro (2012)
Contacts shielding in nanowire field effect transistors
in Journal of applied physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Pitanti, Alessandro; Roddaro, Stefano; Vitiello, Miriam S.; Tredicucci, Alessandro (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy
CNR, Ist Nanosci, I-56127 Pisa, Italy
CNR, Ist Fis Applicata Nello Carrara, I-50019 Sesto Fiorentino, Italy (literal)
- Titolo
- Contacts shielding in nanowire field effect transistors (literal)
- Abstract
- Conductive metallic contacts can significantly affect the operation of field effect transistors fabricated starting from semiconductor nanowires deposited on a dielectric substrate. Screening effects can also lead to systematic errors in the estimates of transport parameters obtained on the basis of simple uniform capacitive models. We study the role of contacts in both back- and lateral-gate transistor geometries and provide rules of thumbs to predict screening effects in real devices. Additionally, we show how the contacts influence charge density profiles within the wire, focusing in particular on their evolution when transistors nonlinear properties are addressed. (literal)
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- Autore CNR
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