http://www.cnr.it/ontology/cnr/individuo/prodotto/ID190287
Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista)
- Type
- Label
- Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.85.184428 (literal)
- Alternative label
M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Polesya, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back (2012)
Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers
in Physical review. B, Condensed matter and materials physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Polesya, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
2. CNR, IOM, Lab TASC, I-34149 Trieste, Italy
3. Univ Munich, Dept Chem, D-81377 Munich, Germany (literal)
- Titolo
- Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (literal)
- Abstract
- Recently, it has been observed that thin ferromagnetic Fe films deposited on top of (Ga,Mn)As layers induce a significant proximity polarization in the (Ga,Mn) As film even at room temperature. Furthermore, it was found that a thin interfacial region of the (Ga,Mn) As film is coupled antiferromagnetically to the Fe layer. Here we report a series of combined x-ray magnetic dichroism and superconducting quantum interference device magnetometer measurements for Fe/(Ga,Mn) As bilayers where the (Ga,Mn) As layer thickness is varied between 5 and 50 nm. We find a reorientation transition of the magnetic proximity polarization as a function of the (Ga,Mn) As thickness. The data are compared to results obtained performing ab initio calculations. A varying concentration of Mn interstitials as a function of (Ga,Mn) As layer thickness is responsible for this reorientation. Furthermore, exchange bias is studied in the fully epitaxial bilayer system. We find a rather strong ferromagnetic exchange bias. The strength of the exchange bias can be estimated by using a simple partial domain wall model. (literal)
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