Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista)

Type
Label
  • Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.85.184428 (literal)
Alternative label
  • M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Polesya, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back (2012)
    Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Polesya, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 18 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany 2. CNR, IOM, Lab TASC, I-34149 Trieste, Italy 3. Univ Munich, Dept Chem, D-81377 Munich, Germany (literal)
Titolo
  • Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (literal)
Abstract
  • Recently, it has been observed that thin ferromagnetic Fe films deposited on top of (Ga,Mn)As layers induce a significant proximity polarization in the (Ga,Mn) As film even at room temperature. Furthermore, it was found that a thin interfacial region of the (Ga,Mn) As film is coupled antiferromagnetically to the Fe layer. Here we report a series of combined x-ray magnetic dichroism and superconducting quantum interference device magnetometer measurements for Fe/(Ga,Mn) As bilayers where the (Ga,Mn) As layer thickness is varied between 5 and 50 nm. We find a reorientation transition of the magnetic proximity polarization as a function of the (Ga,Mn) As thickness. The data are compared to results obtained performing ab initio calculations. A varying concentration of Mn interstitials as a function of (Ga,Mn) As layer thickness is responsible for this reorientation. Furthermore, exchange bias is studied in the fully epitaxial bilayer system. We find a rather strong ferromagnetic exchange bias. The strength of the exchange bias can be estimated by using a simple partial domain wall model. (literal)
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