Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/23/46/465701 (literal)

Alternative label

• Persano, Anna; Taurino, Antonietta; Prete, Paola; Lovergine, Nico; Nabet, Bahram; Cola, Adriano (2012)
  Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts
  in Nanotechnology (Bristol, Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Persano, Anna; Taurino, Antonietta; Prete, Paola; Lovergine, Nico; Nabet, Bahram; Cola, Adriano (literal)

Pagina inizio

• 465701-1 (literal)

Pagina fine

• 465701-6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 23 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 46 (literal)

Note

• Scopus (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Institute for Microelectronics and Microsystems-Unit of Lecce, National Research Council (IMM-CNR), Via Monteroni, I-73100 Lecce, Italy Department of Innovation Engineering, University of Salento, I-73100 Lecce, Italy Department of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104, USA (literal)

Titolo

• Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts (literal)

Abstract

• Conductivity and photoconductivity properties of individual GaAs/AlGaAs core-shell nanowires (NWs) are reported. The NWs were grown by Au-assisted metalorganic vapor phase epitaxy, and then dispersed on a substrate where electrical contacts were defined on the individual NWs by electron beam induced deposition. Under dark conditions, the carrier transport along the NW is found to be limited by Schottky contacts, and influenced by the presence of an oxide layer. Nonetheless, under illumination, the GaAs/AlGaAs core-shell NW shows a significant photocurrent, much higher than the bare GaAs NW. The spatial dependence of the photocurrent within the single core-shell NW, evaluated by a mapping technique, confirms the blocking behavior of the contacts. Moreover, local spectral measurements were performed which allow one to discriminate the contribution of carriers photogenerated in the core and in the shell. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• PAOLA PRETE (Persona)
• ANTONIETTA TAURINO (Unità di personale interno)
• ANNA PERSANO (Unità di personale interno)
• ADRIANO COLA (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• ANTONIETTA TAURINO (Unità di personale interno)
• PAOLA PRETE (Persona)
• ANNA PERSANO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

Insieme di parole chiave di

• Parole chiave di "Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts" (Insieme di parole chiave)