Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots (Articolo in rivista)

Type
Label
  • Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/nl301497j (literal)
Alternative label
  • Romeo L., S. Roddaro, A. Pitanti, D. Ercolani, L. Sorba, and F. Beltram (2012)
    Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots
    in Nano letters (Print); ACS, American chemical society, Washington, DC (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Romeo L., S. Roddaro, A. Pitanti, D. Ercolani, L. Sorba, and F. Beltram (literal)
Pagina inizio
  • 4490 (literal)
Pagina fine
  • 4494 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy 2. Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
Titolo
  • Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots (literal)
Abstract
  • Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K. (literal)
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