http://www.cnr.it/ontology/cnr/individuo/prodotto/ID189593
Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene (Articolo in rivista)
- Type
- Label
- Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/nl301409h (literal)
- Alternative label
Schiros T, D. Nordlund, L. Pálová, D. Prezzi, L. Zhao, K. Soo Kim, U. Wurstbauer, C. Gutiérrez, D. Delongchamp, C. Jaye, D. Fischer, H. Ogasawara, L.G.M. Pettersson, D.R. Reichman, P. Kim, M.S. Hybertsen, A.N. Pasupathy (2012)
Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene
in Nano letters (Print); ACS, American chemical society, Washington, DC (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Schiros T, D. Nordlund, L. Pálová, D. Prezzi, L. Zhao, K. Soo Kim, U. Wurstbauer, C. Gutiérrez, D. Delongchamp, C. Jaye, D. Fischer, H. Ogasawara, L.G.M. Pettersson, D.R. Reichman, P. Kim, M.S. Hybertsen, A.N. Pasupathy (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1.Columbia Univ, Energy Frontier Res Ctr, New York, NY 10027 USA
2. Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
3. Columbia Univ, Dept Chem, New York, NY 10027 USA
4. CNR Nanosci Inst, Ctr S3, I-41125 Modena, Italy
5. Columbia Univ, Dept Phys, New York, NY 10027 USA
6. Sejong Univ, Dept Phys, Seoul 143747, South Korea
7. Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
8. Natl Inst Stand & Technol, Div Polymers, Gaithersburg, MD 20899 USA
9. Natl Inst Stand & Technol, Mat Measurement Lab, Gaithersburg, MD 20899 USA
10. Natl Inst Stand & Technol, Div Ceram, Gaithersburg, MD 20899 USA
11. Stockholm Univ, Dept Phys, S-10691 Stockholm, Sweden
12. Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA (literal)
- Titolo
- Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene (literal)
- Abstract
- Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics. (literal)
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