Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors (Articolo in rivista)

Type
Label
  • Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/nl2030486 (literal)
Alternative label
  • Vitiello MS, D Coquillat, L Viti, D Ercolani, F Teppe, A Pitanti, F Beltram, L Sorba, W Knap, A Tredicucci (2012)
    Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
    in Nano letters (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Vitiello MS, D Coquillat, L Viti, D Ercolani, F Teppe, A Pitanti, F Beltram, L Sorba, W Knap, A Tredicucci (literal)
Pagina inizio
  • 96 (literal)
Pagina fine
  • 101 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://pubs.acs.org/doi/abs/10.1021/nl2030486 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Fisica Applicata Nello Carrara - CNR, Via Madonna del Piano 1, Sesto Fiorentino, I-50019 Italy ? NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, I-56127 Italy § Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France (literal)
Titolo
  • Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors (literal)
Abstract
  • The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10-9 W/(Hz)1/2 at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection. (literal)
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