Submicron YBa2Cu3O7-x bicrystal grain boundary junctions by Focused Ion Beam (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Submicron YBa2Cu3O7-x bicrystal grain boundary junctions by Focused Ion Beam (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0953-2048/17/2/009 (literal)

Alternative label

• G Testa1, AMonaco1, E Sarnelli1, A D'Agostino2, D-JKang3,4, E J Tarte3, SHMennema3, C Bell3 and M G Blamire3 (2004)
  Submicron YBa2Cu3O7-x bicrystal grain boundary junctions by Focused Ion Beam
  in Superconductor science and technology (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G Testa1, AMonaco1, E Sarnelli1, A D'Agostino2, D-JKang3,4, E J Tarte3, SHMennema3, C Bell3 and M G Blamire3 (literal)

Pagina inizio

• 287 (literal)

Pagina fine

• 290 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 17 (literal)

Rivista

• Superconductor science and technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Istituto di Cibernetica 'E Caianiello' del CNR, 80078 Pozzuoli (Naples), Italy 2 Promete S. r. l., INFM Spin Off Company, 80124 Naples, Italy 3 Department of Materials Science, University of Cambridge, Cambridge CB2 3QZ, UK 4 Nanoscience Centre, IRC in Nanotechnology, University of Cambridge, Cambridge CB3 0FF, UK (literal)

Titolo

• Submicron YBa2Cu3O7-x bicrystal grain boundary junctions by Focused Ion Beam (literal)

Abstract

• Submicron YBa2Cu3O7-x bicrystal grain boundary junctions have been fabricated, for the first time, by a focused ion beam process. Although such a process has always been considered detrimental to the YBa2Cu3O7-x because of gallium contamination, high quality 24degrees [001] tilt junctions characterized by RSJ current-voltage characteristics, ICRN products of the order of 1-4 x 10(4) A cm(-2) at 77 K and Fraunhofer-like modulation patterns have been obtained. No significant degradation has been observed over more than 3 months. The critical current density J(C) and the characteristic voltage ICRN show a clear maximum for widths of the order of the Josephson penetration depth. The asymptotic normal resistance shows a typical (width)(-1) dependence, indicating that the FIB process does not increase the grain boundary resistivity of submicron junctions. Experimental results clearly show that FIB is a very powerful tool for the fabrication of high critical temperature superconducting circuits, requiring a small number of submicron Josephson junctions, and for fundamental physics analysis. it also allow the final turning or repair of superconducting or more complex integrated superconducting-semiconducting devices. (literal)

Prodotto di

• Fisica e Tecnologia dei Sistemi Coerenti (MD.P04.010.001) (Modulo)
• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)

Autore CNR

• GIANLUCA TESTA (Persona)
• ETTORE SARNELLI (Persona)

Incoming links:

Prodotto

• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)
• Fisica e Tecnologia dei Sistemi Coerenti (MD.P04.010.001) (Modulo)

Autore CNR di

• ETTORE SARNELLI (Persona)
• GIANLUCA TESTA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Superconductor science and technology (Rivista)