http://www.cnr.it/ontology/cnr/individuo/prodotto/ID188857
Organic field-effect transistors as new paradigm for large-area molecular junctions (Articolo in rivista)
- Type
- Label
- Organic field-effect transistors as new paradigm for large-area molecular junctions (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.orgel.2012.01.020 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Casalini S.; Shehu A.; Destri S.; Porzio W.; Pasini M.; Vignali F.; Borgatti F.; Albonetti C.; Leonardi F.; Biscarini F. (literal)
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- http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=Q2p8g1flhf19EeH@k46&page=1&doc=3 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Destri S.; Porzio W.; Pasini M.; Vignali F. ISMAC-CNR, Casalini S.; Shehu A.; Borgatti F.; Albonetti C.; Leonardi F.; Biscarini F. ISMN-CNR (literal)
- Titolo
- Organic field-effect transistors as new paradigm for large-area molecular junctions (literal)
- Abstract
- Self-Assembly Monolayers (SAMs) are considered a promising route for solving technological
hindrances (such as bias-stress, contact resistance, charge trapping) affecting the electrical
performances of the Organic Field-Effect Transistors (OFETs). Here we use an OFET
based on pentacene thin film to investigate the charge transport across conjugated SAMs
at the Au/pentacene interface. We synthesized a homolog series of p-conjugated molecules,
termed Tn-C8-SH, consisting of a n-unit oligothienyl Tn (n = 1. . .4) bound to an
octane-1-thiol (C8-SH) chain that self-assembles on the Au electrodes. The multi-parametric
response of such devices yields an exponential behavior of the field-effect mobility (l),
current density (J), and total resistivity (R), due to the SAM at the charge injection interface
(i.e. Au-SAM-pentacene). The surface treatment of the OFETs induces a clear stabilization of
different parameters, like sub-threshold slope and threshold voltage, thanks to standardized
steps in the fabrication process. (literal)
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