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Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films (Articolo in rivista)
- Type
- Label
- Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films (Articolo in rivista) (literal)
- Anno
- 2000-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0927-0256(00)00041-0 (literal)
- Alternative label
Bruschi, P. ; Nannini, A.; Piotto, M. (2000)
Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films
in Computational materials science; Elsevier, Tokyo (Giappone)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bruschi, P. ; Nannini, A.; Piotto, M. (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- Note
- ISI Web of Science (WOS) (literal)
- Scopu (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dipartimento Ingegneria dell'Informazione, Università di Pisa, Italy (literal)
- Titolo
- Three-dimensional Monte Carlo Simulations of electromigration in polycrystalline thin films (literal)
- Abstract
- The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (literal)
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