Micromachined silicon suspended wires with submicrometric dimensions (Articolo in rivista)

Type
Label
  • Micromachined silicon suspended wires with submicrometric dimensions (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bruschi, P; Diligenti, A ; Piotto, M (2001)
    Micromachined silicon suspended wires with submicrometric dimensions
    in Microelectronic engineering; North Holland Pub. Co., Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruschi, P; Diligenti, A ; Piotto, M (literal)
Pagina inizio
  • 959 (literal)
Pagina fine
  • 965 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 57-8 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Ingegneria dell' Informazione: Elettronica, Informatica, Telecomunicazioni, Universita` degli Studi di Pisa, via Diotisalvi, 2, I-56126 Pisa, Italy (literal)
Titolo
  • Micromachined silicon suspended wires with submicrometric dimensions (literal)
Abstract
  • Silicon suspended wires with a cross section of about 0.25 mum(2) have been fabricated by means of a simple process, starting from a SOI n-type wafer. Standard lithography, isotropic and anisotropic etchings were used. The process requires only two masks with a minimum dimension of 4 mum. After the definition of the suspended structures a further oxidation step was performed in order to reduce the silicon core dimensions. Particular care was devoted to the rinsing step to avoid any sticking problem to the substrate. (literal)
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