Positive resist for UV and X-ray lithography synthesized through sol-gel chemistry (Articolo in rivista)

Type
Label
  • Positive resist for UV and X-ray lithography synthesized through sol-gel chemistry (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s10971-011-2512-x (literal)
Alternative label
  • Brigo, L; Grenci, G; Carpentiero, A; Pistore, A; Tormen, M; Guglielmi, M; Brusatin, G (2011)
    Positive resist for UV and X-ray lithography synthesized through sol-gel chemistry
    in Journal of sol-gel science and technology; SPRINGER, DORDRECHT (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Brigo, L; Grenci, G; Carpentiero, A; Pistore, A; Tormen, M; Guglielmi, M; Brusatin, G (literal)
Pagina inizio
  • 400 (literal)
Pagina fine
  • 407 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 60 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Padua, Mat Sector, Dept Mech Engn, I-35131 Padua, Italy; CNR IOM TASC Lab, I-34149 Trieste, Italy (literal)
Titolo
  • Positive resist for UV and X-ray lithography synthesized through sol-gel chemistry (literal)
Abstract
  • A positive tone resist for UV and X-ray lithography synthesized starting from an organically modified silicon alkoxide, bis(triethoxysilyl)benzene, through the sol-gel method, either in basic or in acid catalysis, is presented. Being directly photo-processable, the sol-gel system combines the opportunity to avoid the use of a sacrificial layer in the fabrication process, with the possibility to fit electro-optical and structural properties of the final device material to specific requirements. In addition, the positive tone behaviour allows to preserve the organic functionality of the system after irradiation. A study of the optical and structural modifications induced on the resist by irradiation has been carried out by FT-IR spectroscopy, UV-vis spectroscopy and spectroscopic ellipsometry. An interpretation of the mechanisms leading to exposed cross-linked film development is given. Experiments have demonstrated the possibility of obtaining structures on films with lateral dimensions spanning from the micron scale up to less than a hundred nm, opening the way to a possible exploitation of such positive tone functional system in the field of miniaturized sensors. (literal)
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