Ultrathin ?microc-Si films deposited by PECVD (Articolo in rivista)

Type
Label
  • Ultrathin ?microc-Si films deposited by PECVD (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0040-6090(00)01595-9 (literal)
Alternative label
  • R. Rizzoli?; C. Summonte; J. Pla'; E. Centurioni; G. Ruani; A. Desalvo; F. Zignani (2001)
    Ultrathin ?microc-Si films deposited by PECVD
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R. Rizzoli?; C. Summonte; J. Pla'; E. Centurioni; G. Ruani; A. Desalvo; F. Zignani (literal)
Pagina inizio
  • 7 (literal)
Pagina fine
  • 10 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 383 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • R. Rizzoli_a?, C. Summonte_a, J. Pla┬┤_a, E. Centurioni_a, G. Ruani_b, A. Desalvo_c, F. Zignani_c aCNR-LAMEL,?ia Gobetti 101, I-40129 Bologna, Italy bCNR-ISM, ?ia Gobetti 101, I-40129 Bologna, Italy cDICASM, Bologna Uni?ersity, Bologna, Italy (literal)
Titolo
  • Ultrathin ?microc-Si films deposited by PECVD (literal)
Abstract
  • The crystalline fraction of microcrystalline silicon films 18-200 nm thick, deposited by VHF plasma and by chemical transport deposition (CTD) was characterized by Raman and optical measurements. On a p-type CTD sample, thinner than 20 nm, a crystalline fraction as large as 78%, to our knowledge the largest obtained by VHF plasma on p-type films in this thickness range, was measured. Transmission electron microscopy shows crystallites extending to the interface with the substrate. Electrical conductivities in the range 10(-2)-10(0) S/cm, and 10(-1)-10(1) S/cm after annealing at 250 degreesC, were measured. Weak dependence of crystalline fraction and electrical properties on thickness was observed. (literal)
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