Transport properties in manganite thin films (Articolo in rivista)

Type
Label
  • Transport properties in manganite thin films (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.71.06J415 (literal)
Alternative label
  • S. Mercone; C. A. Perroni; V. Cataudella; C. Adamo; M. Angeloni; C. Aruta; G. De Filippis; F. Miletto; A. Oropallo; P. Perna; A. Yu. Petrov; U. Scotti di Uccio; L. Maritato (2005)
    Transport properties in manganite thin films
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Mercone; C. A. Perroni; V. Cataudella; C. Adamo; M. Angeloni; C. Aruta; G. De Filippis; F. Miletto; A. Oropallo; P. Perna; A. Yu. Petrov; U. Scotti di Uccio; L. Maritato (literal)
Pagina inizio
  • 064415 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 71 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Google Scholar (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Coherentia-INFM and Dipartimento di Fisica \"E. R. Caianiello,\" Università di Salerno, Via S. Allende, 84081 Baronissi (SA), Italy 2Coherentia-INFM and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli \"Federico II,\" Via Cintia, 80126 Napoli, Italy 3Coherentia-INFM and Dipartimento di Ingegneria Meccanica, Universitá di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy 4Coherentia-INFM and Di MSAT, Universita' di Cassino, Via Di Biasio 43, 03043 Cassino, Italy (literal)
Titolo
  • Transport properties in manganite thin films (literal)
Abstract
  • The resistivity of thin La(0.7)A(0.3)MnO(3) films (A = Ca, Sr) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several. substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity scales as T(alpha) with a alpha similar or equal to 2.5 for intermediate strengths of disorder supporting the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. For large values of disorder the low-temperature behavior of the resistivity is well described by the law T(3) characteristic of anomalous single magnon scattering processes, while in the regime of low disorder the alpha exponent tends to a value near 2. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario also in films doped with strontium (A = Sr). (literal)
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