Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001) (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001) (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.69.125332 (literal)

Alternative label

• CONOR HOGAN1; D. Paget2; O. E. Tereshchenko3; Lucia Reining4; G. Onida5 (2004)
  Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001)
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• CONOR HOGAN1; D. Paget2; O. E. Tereshchenko3; Lucia Reining4; G. Onida5 (literal)

Pagina inizio

• 125332 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 69 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) Dipartimento di Fisica and INFM, Universita di Roma ''Tor Vergata,'' 00133 Roma, Italy; (2) Laboratoire de Physique de la Matie`re Condense ` Ecole Polytechnique, 91128 Palaiseau Cedex, France; (3) Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia; (4) Laboratoire des Solides Irradiés, UMR 7642 CNRS/CEA, Ecole Polytechnique, 91128 Palaiseau Cedex, France; (5) Dipartimento di Fisica and INFM, Università di Milano, Italy (literal)

Titolo

• Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001) (literal)

Abstract

• Upon adsorption of Cs, the As-rich c(2x8)/(2x4) reconstruction of GaAs(001) is found to exhibit an intense negative signal between 3 eV and 5 eV in the reflectance anisotropy spectrum. This signal has a universal character in that similar features also appear on the Ga-rich surface. The mechanism of this signal is interpreted using ab initio calculations of Cs adsorption at As and Ga sites of the As-rich surface. The calculations succeed in explaining the universality of the signal. In the vicinity of the E0' bulk critical point at 4.5 eV, the signal arises from perturbation of bulk states terminating at the surface. At lower energies, the signal arises from the creation of new surface resonances induced by the Cs adatom. (literal)

Prodotto di

• Tecniche spettroscopiche e optoelettroniche per lo studio di superfici e interfacce (MD.P03.026.003) (Modulo)

Autore CNR

• CONOR DAVID HOGAN (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001)" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• CONOR DAVID HOGAN (Unità di personale interno)

Prodotto

• Tecniche spettroscopiche e optoelettroniche per lo studio di superfici e interfacce (MD.P03.026.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001)" (Insieme di parole chiave)