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Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films (Articolo in rivista)

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Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films (Articolo in rivista) (literal)

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Giovanni A. Battiston; Rosalba Gerbasi; Giovanni Carta; Fabio Marchetti; Claudio Pettinari; Agustin Rodriguez; Davide Barreca; Cinzia Maragno; Eugenio Tondello (2006)
Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films
in Journal of the Electrochemical Society; Electrochemical Society, Pennington [NJ] (Stati Uniti d'America)
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Giovanni A. Battiston; Rosalba Gerbasi; Giovanni Carta; Fabio Marchetti; Claudio Pettinari; Agustin Rodriguez; Davide Barreca; Cinzia Maragno; Eugenio Tondello (literal)

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Subject Category: Materials Science, Coatings Attention was devoted to the analysis of film microstructure, composition, and morphology as a function of the synthesis conditions by means of a multi-technique approach. The most critical factors for BST obtainment turned out to be the precursor input molar ratios and the ex-situ treatment conditions. As demonstrated by the XRD and XPS investigation, the formation of a pure and crystalline BST phase required a minimum annealing temperature of 800°C and an optimized precursor input ratio. Finally, the surface morphology, as probed by AFM, was characterized by the presence of globular grains, typical of an island-like growth mode. (literal)

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The increasing interest devoted to ferroelectric Ba1-xSrxTiO3 (BST) thin films for next-generation dynamic random access memory (DRAM) devices is due to their reasonably large dielectric constant together with small dielectric losses and leakage currents. In this context, the development of suitable synthetic strategies aimed at obtaining BST films with tailored characteristics plays an important role. (literal)

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This paper was devoted to the use of novel second-generation molecular precursors of Ba and Sr for the CVD of Ba1-xSrxTiO3 (BST)-based thin films. In particular, [Ba(thd)2(pmdien)(Meim)] and [Sr2(thd)4(imH)2(EtOH)] were synthesized, characterized, and used for the first time in such applications. These precursors display significant advantages compared to the first-generation ones, such as increased volatility and clean, and reproducible vaporization. Ti(OiPr)4, a well known CVD precursor, was used as Ti source. Deposition experiments were carried out at 450°C and followed by ex-situ thermal treatments in air up to 800°C, aimed at favoring solid-state reactions yielding the formation of BST. (literal)

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1-2-3: ICIS-CNR, Padova 4-5: Department of Chemical Sciences, Camerino University 6: La Laguna University, Inorganic Chemistry Department, Avda. Astrofisico, Campus de Anchieta, La Laguna 7: ISTM,CNR - INSTM, Department of Chemistry , Padova University 8: Department of Chemistry and INSTM, Padova University, 35131 Padova, Italy (literal)

Titolo

Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films (literal)

Abstract

Ba1-xSrxTiO3 (BST) thin films, appealing candidates for innovative applications in microelectronics, have been obtained by chemical vapor deposition using innovative second-generation Ba and Sr molecular precursors, namely, [Ba(thd)2(pmdien)(Meim)] (thdH = 2,2,6,6-tetramethyl-3,5-heptanedione; pmdien = N,N,N',N\",N\"-pentamethyldiethylenetriamine; Meim = methylimidazole) and [Sr2(thd)4(imH)2(EtOH)] (imH = imidazole). Titanium tetra-isopropoxide Ti(OiPr)4 was used as Ti source. Film preparation was carried out on quartz and Si(100) substrates at 450°C under a nitrogen+oxygen atmosphere and followed by annealing in air at temperatures up to 800°C. The structural, compositional, and morphological evolution of the films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, with particular focus on the interplay between the system properties and the processing conditions. The formation of nanophasic BST layers (crystallite size < 30 nm) required a minimum annealing temperature of 800°C. (literal)

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