Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction (Articolo in rivista)

Type
Label
  • Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.3204429 (literal)
Alternative label
  • Balboni R.; Borionetti G.; Moiraghi L.; Vaccari G., Polignano M. L.; Carnevale G. P.; Cazzaniga F.; Mica I. (1); Sammiceli F. (2009)
    Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction
    in ECS transactions
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Balboni R.; Borionetti G.; Moiraghi L.; Vaccari G., Polignano M. L.; Carnevale G. P.; Cazzaniga F.; Mica I. (1); Sammiceli F. (literal)
Pagina inizio
  • 385 (literal)
Pagina fine
  • 396 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 25 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, via Gobetti 101, 40129 Bologna, Italy; MEMC Electronic Materials SpA, Viale Gherzi, 31, 28100 Novara, Italy; Numonyx, Via Olivetti, 2, 20041 Agrate Brianza (MB), Italy (literal)
Titolo
  • Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction (literal)
Abstract
  • The application of the focused ion beam (FIB) to the preparation of thin lamellae of Si-based samples for strain analysis by means of convergent beam electron diffraction (CBED) was investigated. The crystal damage induced by the ion beam at the sample surface is expected to influence the pattern quality and the strain analysis too. Repeatable results in the strain measurements were obtained only if a low energy (5 KeV) finishing step was used in the sample preparation. The strain measurement results obtained in patterned structures with different strain amount were also compared with those calculated using a commercial process simulator and with electrical measurements performed on the final devices. (literal)
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