GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes (Articolo in rivista)

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  • GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.80.233303 (literal)
Alternative label
  • Berkovits, VL (2); Ulin, VP (2); Tereshchenko, OE (3); Paget, D (1); Rowe, ACH (1); Chiaradia, P (4,5); Doyle, BP (6); Nannarone, S (6,7) (2009)
    GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes
    in Physical review. B, Condensed matter and materials physics; American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Berkovits, VL (2); Ulin, VP (2); Tereshchenko, OE (3); Paget, D (1); Rowe, ACH (1); Chiaradia, P (4,5); Doyle, BP (6); Nannarone, S (6,7) (literal)
Pagina inizio
  • 233303-1 (literal)
Pagina fine
  • 233303-4 (literal)
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  • http://prb.aps.org/abstract/PRB/v80/i23/e233303 (literal)
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  • 80 (literal)
Rivista
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  • 4 (literal)
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  • 23 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Ecole Polytech, CNRS, F-91128 Palaiseau, France 2. AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia 3. Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia 4. Univ Roma Tor Vergata, Dipartimento Fis, CNISM Unit, I-00133 Rome, Italy 5. Univ Roma Tor Vergata, NAST, I-00133 Rome, Italy 6. CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy 7. Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy (literal)
Titolo
  • GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes (literal)
Abstract
  • Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 10(3) times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS(-) and OH(-) anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces. (literal)
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