Conductive Cu-TiO2 thin films obtained via MOCVD (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Conductive Cu-TiO2 thin films obtained via MOCVD (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Alvarez Y Quintavalle F., Battiston G.A., Casellato U., Fregona D., Gerbasi R., Loro F. (2002)
  Conductive Cu-TiO2 thin films obtained via MOCVD
  in Journal de physique. IV
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alvarez Y Quintavalle F., Battiston G.A., Casellato U., Fregona D., Gerbasi R., Loro F. (literal)

Pagina inizio

• 147 (literal)

Pagina fine

• 153 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 12 (literal)

Rivista

• Journal de physique. IV (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• Conductive Cu-TiO2 thin films obtained via MOCVD (literal)

Abstract

• Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were performed by using titanium tetraisopropoxide Ti(OiPr)4, and copper(II) acetylacetonatehydrate Cu(acac)2 H2O in the temperature range 275-370 °C. The composite Cu-TiO2 with very low percent of titanium dioxide (TiO2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region. (literal)

Prodotto di

• Institute of inorganic chemistry and surfaces (ICIS) (Istituto)

Incoming links:

Prodotto

• Institute of inorganic chemistry and surfaces (ICIS) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal de physique. IV (Rivista)