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Conductive Cu-TiO2 thin films obtained via MOCVD (Articolo in rivista)
- Type
- Label
- Conductive Cu-TiO2 thin films obtained via MOCVD (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Alvarez Y Quintavalle F., Battiston G.A., Casellato U., Fregona D., Gerbasi R., Loro F. (2002)
Conductive Cu-TiO2 thin films obtained via MOCVD
in Journal de physique. IV
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Alvarez Y Quintavalle F., Battiston G.A., Casellato U., Fregona D., Gerbasi R., Loro F. (literal)
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- Pagina fine
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- Conductive Cu-TiO2 thin films obtained via MOCVD (literal)
- Abstract
- Growths of nanophased Cu, CuO, Cu-TiO2 and Cu2O-TiO2 thin films were
performed by using titanium tetraisopropoxide Ti(OiPr)4, and copper(II)
acetylacetonatehydrate Cu(acac)2 H2O in the temperature range 275-370 °C.
The composite Cu-TiO2 with very low percent of titanium dioxide
(TiO2<5%) can be an alternative procedure to obtain well adherent,
smooth and well connected Cu films. Cu2O-TiO2 were obtained by annealing
of Cu-TiO2 thin films. Cu2O in a TiO2 matrix remains unaltered after
repeated thermal treatments when the Cu:Ti metal ratio is equal or less
than 15:1. The films exhibited semiconductor characteristics with a
moderate transparency, 40-60% in the visible region. (literal)
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