Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista)

Type
Label
  • Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0268-1242/21/6/L01 (literal)
Alternative label
  • G Bisognin; D De Salvador; E Napolitani; A Carnera; E Bruno; S Mirabella; F Priolo; and A Mattoni; (2006)
    Lattice strain induced by boron clusters in crystalline silicon
    in Semiconductor science and technology (Online); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G Bisognin; D De Salvador; E Napolitani; A Carnera; E Bruno; S Mirabella; F Priolo; and A Mattoni; (literal)
Pagina inizio
  • L41 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1CNR-INFM MATIS and Dipartimento di Fisica, Università di Padova, 35131 Padova, Italy 2 CNR-INFM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, 95123 Catania, Italy 3 CNR-INFM SLACS Sardinian Laboratory for Computational Materials Science and Dipartimento di Fisica Università di Cagliari, 09042 Monserrato (Ca), Italy (literal)
Titolo
  • Lattice strain induced by boron clusters in crystalline silicon (literal)
Abstract
  • We studied the strain induced in a silicon lattice by the presence of boron clusters formed by the interaction of high concentration (2 × 1020 at cm-3) substitutional B with Si interstitials produced by ion implantation. We found that the clustered immobile B induces a significant amount of strain in the host lattice. By analysing the dissolution behaviour of boron clusters after prolonged annealing, we found that the strain linearly decreases as the amount of clustered B decreases, evidencing a constant lattice expansion ?V per clustered B atom of (3.7 ± 0.6) Å3, independently of the annealing temperature and time. By performing model potential calculations of ?V on selected boron clusters, we concluded that these clusters can be structurally more complex than those commonly assumed or hypothesized so far. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it