Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.jnucmat.2010.12.032 (literal)

Alternative label

• Lamperti, A; Radnoczi, G; Geszti, O; Birjega, R; Caricato, AP; Trautmann, C; Ossi, PM (2011)
  Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime
  in Journal of nuclear materials; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lamperti, A; Radnoczi, G; Geszti, O; Birjega, R; Caricato, AP; Trautmann, C; Ossi, PM (literal)

Pagina inizio

• 173 (literal)

Pagina fine

• 178 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 416 (literal)

Rivista

• Journal of nuclear materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR, Lab MDM, I-20041 Agrate Brianza, MB, Italy Res Inst Tech Phys & Mat Sci, H-1121 Budapest, Hungary Natl Inst Laser Plasma & Radiat Phys, Bucharest 077125, Romania Univ Lecce, Dipartimento Fis, I-73100 Lecce, Italy Gesell Schwerionenforsch GSI, Mat Forsch, D-64291 Darmstadt, Germany Politecn Milan, Dipartimento Energia, I-20133 Milan, Italy (literal)

Titolo

• Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime (literal)

Abstract

• Poly-crystalline, partially monoclinic, yttria partially stabilized zirconia (Y-PSZ) was deposited on a 25 nm thick Au-covered (1 0 0) Si substrate by means of UV pulsed laser ablation. The 400 nm thick films were irradiated with single ionized swift heavy uranium ((238)U) ions of about 1300 MeV, applying ion fluences from 5 to 20 x 10(11) cm(-2). The samples were characterized before and after irradiation using X-ray diffraction (XRD), micro-Raman spectroscopy, and transmission electron microscopy (TEM). With increasing ion fluence there is a progressive change from monoclinic to tetragonal/cubic polymorphs. TEM of selected samples indicates formation of Au islands on the Si substrate and the development of a defective microstructure under irradiation. The nature, distribution and aggregation of ion-beam induced defects are mainly associated with oxygen migration to the film surface and are probably responsible for the structure changes under irradiation. (literal)

Editore

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALESSIO LAMPERTI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ALESSIO LAMPERTI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of nuclear materials (Rivista)

Editore di

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Insieme di parole chiave di

• Keywords of "Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime" (Insieme di parole chiave)