Transitivity of band offsets between semiconductor heterojunctions and oxide insulators (Articolo in rivista)

Type
Label
  • Transitivity of band offsets between semiconductor heterojunctions and oxide insulators (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3655470 (literal)
Alternative label
  • Afanas'ev, VV; Chou, HY; Houssa, M; Stesmans, A; Lamagna, L; Lamperti, A; Molle, A; Vincent, B; Brammertz, G (2011)
    Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
    in Applied physics letters (Online); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Afanas'ev, VV; Chou, HY; Houssa, M; Stesmans, A; Lamagna, L; Lamperti, A; Molle, A; Vincent, B; Brammertz, G (literal)
Pagina inizio
  • 172101 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 99 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Leuven, Dept Phys, B-3001 Heverlee, Belgium IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy IMEC, B-3001 Louvain, Belgium (literal)
Titolo
  • Transitivity of band offsets between semiconductor heterojunctions and oxide insulators (literal)
Abstract
  • By analyzing energy barriers for electrons at interfaces of Ge, GaAs, and In(0.15)Ga(0.85)As with insulating high-permittivity oxides (HfO(2), ZrO(2)) using the spectroscopy of internal photoemission, we found that the insertion of a nanometer-thin interlayer of a dissimilar semiconductor, i.e., Si on Ge or Ge on GaAs, has no measurable influence on the interface band alignment. This result indicates the absence of any substantial interface dipoles across the stack composed of a semiconductor heterojunction and an insulating oxide and suggests the validity of the transitivity rule previously inferred on the basis of bulk-density-of-states arguments in the case of nanometer-sized multilayer structures. (literal)
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