Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista)

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Label
  • Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1143/APEX.5.021102 (literal)
Alternative label
  • Spiga, S; Driussi, F; Lamperti, A; Congedo, G; Salicio, O (2012)
    Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories
    in Applied physics express (Online); Japan Society of Applied Physics, Tokyo (Giappone)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Spiga, S; Driussi, F; Lamperti, A; Congedo, G; Salicio, O (literal)
Pagina inizio
  • 021102 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 5 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy Univ Udine, DIEGM, I-33100 Udine, Italy (literal)
Titolo
  • Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (literal)
Abstract
  • The charge trapping properties of HfO2 thin films for application in charge trap memories are investigated as a function of high-temperature postdeposition annealing (PDA) and oxide thickness in the TaN/Al2O3/HfO2/SiO2/Si structure. The trap density (NT) in HfO2, extracted by simulating the programming transient, is in the 1019-1020 cm(-3) range, and it is related to film thickness and PDA temperature. Diffusion phenomena in the stack play a significant role in modifying NT in HfO2 and the insulating properties of the Al2O3 layer. The memory performances for 1030 degrees C PDA are promising with respect to standard stacks featuring Si3N4. (literal)
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