Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (Articolo in rivista)

Type
Label
  • Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3429084 (literal)
Alternative label
  • E. Napolitani (1); G. Bisognin (1); E. Bruno (2); M. Mastromatteo (1); G. G. Scapellato (2); S. Boninelli (2); D. De Salvador (1) S. Mirabella (2) C. Spinella (3); A. Carnera (1); F. Priolo (2) (2010)
    Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
    in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Napolitani (1); G. Bisognin (1); E. Bruno (2); M. Mastromatteo (1); G. G. Scapellato (2); S. Boninelli (2); D. De Salvador (1) S. Mirabella (2) C. Spinella (3); A. Carnera (1); F. Priolo (2) (literal)
Pagina inizio
  • 201906 (literal)
Pagina fine
  • 201908 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) MATIS-IMM-CNR and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy; (2) MATIS-IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy; (3) IMM-CNR, VIII Strada 5, 95121 Catania, Italy (literal)
Titolo
  • Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge (literal)
Abstract
  • The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 °C that saturates above 420 °C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1±0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge. © 2010 American Institute of Physics. (literal)
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