http://www.cnr.it/ontology/cnr/individuo/prodotto/ID181860
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors (Articolo in rivista)
- Type
- Label
- High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2009.10.065 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Alessandro Molle; Silvia Baldovino; Sabina Spiga; Marco Fanciulli (literal)
- Pagina inizio
- Pagina fine
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- Rivista
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- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- a Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano, Italy
b Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, Milano, Italy (literal)
- Titolo
- High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors (literal)
- Abstract
- In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative
channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity
dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still
suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and
electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be
emphasized.On one side is the dilemmaonwhich chemical/physical passivation ismore suitable tominimize the
unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side,
overcoming the SiO2 gate stack opens the route to a number of potentially outperforming high-k oxides. Two
deposition approacheswere here separately adopted to investigate the high-k oxide growth onGe substrates, the
molecular beam deposition (MBD) of Gd2O3 and the atomic layer deposition (ALD) of HfO2. In the MBD
framework epitaxial and amorphous Gd2O3 filmswere grownonto GeO2-passivatedGe substrates. In this case,Ge
passivation was achieved by exploiting the Ge4+ bonding state in GeO2 ultra-thin interface layers intentionally
deposited in between Ge and the high-k oxide bymeans of atomic oxygen exposure to Ge. The composition of the
interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling
bonds at the GeO2/Ge interface has been reported. Finally, the electrical response ofMOS capacitors incorporating
Gd2O3 and GeO2-passivated Ge substrates has been checked by capacitance-voltagemeasurements. On the other
hand, the structural and electrical properties of HfO2 films grown by ALD on Ge by using different oxygen
precursors, i.e.H2O, Hf(OtBu)2(mmp)2, andO3,were compared. Exploiting O3 as oxidizing precursor in the ALD of
HfO2 is shown to play a beneficial role in efficiently improving the electrical quality of the high-k/Ge interface
through the pronounced formation of a GeO2-like interface layer. In both cases, carefully engineering the
chemical nature of the interface by the deliberate deposition of interface passivation layers or by the proper
choice of ALD precursors turns out to be a key-step to couple high-k materials with Ge. (literal)
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