Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide (Articolo in rivista)

Type
Label
  • Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2162690 (literal)
Alternative label
  • Xiangmei Duan; Stefano Baroni; Silvio Modesti; Maria Peressi (2006)
    Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide
    in Applied physics letters (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Xiangmei Duan; Stefano Baroni; Silvio Modesti; Maria Peressi (literal)
Pagina inizio
  • 022115 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1063/1.2162690 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM-DEMOCRITOS National Simulation Center, via Beirut 2-4, 34014 Trieste, Italy INFM-DEMOCRITOS National Simulation Center, via Beirut 2-4, 34014 Trieste, Italy and SISSA--Scuola Internazionale Superiore di Studi Avanzati, via Beirut 2-4, 34014 Trieste, Italy INFM-TASC National Laboratory, Area Science Park, 34012 Trieste, Italy and Dipartimento di Fisica, Università di Trieste, via Valerio 2, 34127 Trieste, Italy (literal)
Titolo
  • Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide (literal)
Abstract
  • We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating doping regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic layers. The simulated cross-sectional scanning tunneling microscopy images show a bright signal at negative bias, which is strongly attenuated when the bias is reversed. This scenario is consistent with experimental results which had been attributed to hitherto unidentified Si complexes. (literal)
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