Formation and distribution of compounds at the Ru - Si(001) ultrathin film interface (Articolo in rivista)

Type
Label
  • Formation and distribution of compounds at the Ru - Si(001) ultrathin film interface (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3079507 (literal)
Alternative label
  • L. Pasquali; N. Mahne; M. Montecchi; V. Mattarello; S. Nannarone; (2009)
    Formation and distribution of compounds at the Ru - Si(001) ultrathin film interface
    in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. Pasquali; N. Mahne; M. Montecchi; V. Mattarello; S. Nannarone; (literal)
Pagina inizio
  • 044304-1 (literal)
Pagina fine
  • 044304-6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 105 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Ingegneria dei Materiali e dell'Ambiente, Universita? di Modena e Reggio Emilia, Via Vignolese 905, 41100 Modena, Italy; INFM-CNR Laboratorio TASC, Area Science Park, s.s. 14, Km 163.5, 34012 Basovizza (Trieste), Italy; Media Lario Technologies, Localita? Pascolo, 23842 Bosisio Parini (LC), Italy; (literal)
Titolo
  • Formation and distribution of compounds at the Ru - Si(001) ultrathin film interface (literal)
Abstract
  • Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From the evolution of the Ru and Si core levels, we find that alloying takes place at the interface during growth and estimate the thickness of the intermixed region to be of the order of 15-20 ML. Annealing at increasingly high temperatures causes the formation of different silicide phases, which are discussed in relation to theoretical and experimental data on related transition metal silicides. (literal)
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