http://www.cnr.it/ontology/cnr/individuo/prodotto/ID181346
Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (Articolo in rivista)
- Type
- Label
- Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3651400 (literal)
- Alternative label
Alessandro Molle; Silvia Baldovino; Marco Fanciulli; Dimitra Tsoutsou;
Evangelos Golias; Athanasios Dimoulas (2011)
Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition
in Journal of applied physics (online); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Alessandro Molle; Silvia Baldovino; Marco Fanciulli; Dimitra Tsoutsou;
Evangelos Golias; Athanasios Dimoulas (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864, Italy
2Dipartimento di Scienza dei Materiali, Universita` degli Studi di Milano Bicocca, Milano, Italy
3MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10, Greece (literal)
- Titolo
- Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (literal)
- Abstract
- Changes in the electron trapping at the interface between Ge substrates and LaGeOx films grown
by atomic O assisted molecular beam deposition are inferred upon post deposition annealing
treatment on the as-deposited films from electrically detected magnetic resonance (EDMR)
spectroscopy and from the electrical response of Pt/LaGeOx/Ge metal oxide semiconductor
(MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is
consistent with the EDMR detected reduction of oxide defects which are associated with GeO
species in the LaGeOx layer as evidenced by x-ray photoelectron spectroscopy. (literal)
- Editore
- Prodotto di
- Autore CNR
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di