Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (Articolo in rivista)

Type
Label
  • Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3651400 (literal)
Alternative label
  • Alessandro Molle; Silvia Baldovino; Marco Fanciulli; Dimitra Tsoutsou; Evangelos Golias; Athanasios Dimoulas (2011)
    Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition
    in Journal of applied physics (online); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alessandro Molle; Silvia Baldovino; Marco Fanciulli; Dimitra Tsoutsou; Evangelos Golias; Athanasios Dimoulas (literal)
Pagina inizio
  • 084504 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 110 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864, Italy 2Dipartimento di Scienza dei Materiali, Universita` degli Studi di Milano Bicocca, Milano, Italy 3MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10, Greece (literal)
Titolo
  • Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition (literal)
Abstract
  • Changes in the electron trapping at the interface between Ge substrates and LaGeOx films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeOx/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeOx layer as evidenced by x-ray photoelectron spectroscopy. (literal)
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