http://www.cnr.it/ontology/cnr/individuo/prodotto/ID180840
Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors (Articolo in rivista)
- Type
- Label
- Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/0268-1242/26/6/064004 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- francesco d'acapito (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors (literal)
- Abstract
- X-ray absorption spectroscopy (XAS) is an ideal technique for the investigation of the local
structure in materials and in particular around dopant species in semiconducting crystals. This
experimental technique permits the quantitative determination of structural parameters such as
the bond distances and number of neighbors that are fundamental for understanding the
incorporation site of the dopant in the matrix. The use of ab initio advanced methods for the
simulation of atomic structures or XAS spectra has recently permitted a more complete
interpretation of experimental data. Examples on the use of joint theoretical / experimental
methods are given here as well as some perspectives for the future development of XAS data
analysis. (literal)
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