http://www.cnr.it/ontology/cnr/individuo/prodotto/ID180392

Comprehensive Device Simulation Modelling of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Comprehensive Device Simulation Modelling of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures (Articolo in rivista) (literal)

Anno

2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1109/TNS.2004.832602 (literal)

Alternative label

Francesco Moscatelli;Attilio Santocchia; Barry MacEvoy; Geoff Hall; Daniele Passeri; Marco Petasecca and Giorgio Umberto Pignatel (2004)
Comprehensive Device Simulation Modelling of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures
in IEEE transactions on nuclear science; IEEE, New York (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Francesco Moscatelli;Attilio Santocchia; Barry MacEvoy; Geoff Hall; Daniele Passeri; Marco Petasecca and Giorgio Umberto Pignatel (literal)

Pagina inizio

1759 (literal)

Pagina fine

1765 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1323764 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

51 (literal)

Rivista

IEEE transactions on nuclear science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

4 (literal)

Note

ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

INFN di Perugia, 06123 Perugia, Italy Dipartimento d'Ingegneria Elettronica e dell'Informazione, Università di Perugia, 06125 Perugia, Italy Physics Department, Università di Perugia, 06123 Perugia, Italy High Energy Physics Group, Imperial College London, London SW7 2BW, U.K. (literal)

Titolo

Comprehensive Device Simulation Modelling of Heavily Irradiated Silicon Detectors at Cryogenic Temperatures (literal)

Abstract

Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10^15 cm^-2 (1-MeV) neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called \"three-level model\" has been used. A comprehensive analysis of the influence of the V2, CiOi and V2O capture cross sections on the effective doping concentration (Neff ) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10^-18-10^-12 cm2. The simulated results are compared with charge collection spectra obtained with 1064-nm laser pulses on devices irradiated with 23-GeV protons as a function of detector bias voltage. To validate the model, a wide range of temperature and fluence has been studied using a one-dimensional (1-D) simplified structure. Thousands of simulation results have been cross checked with the experimental data. The data between 190 K (the lower limit for simulations due to computational difficulties) and 290 K are well reproduced for all of the fluences considered. We conclude that the three-level model can be successfully used to predict irradiated detector behavior down to a temperature of at least 190 K. (literal)

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