Well-ordered (1 0 0) InAs surfaces using wet chemical treatments (Articolo in rivista)

Type
Label
  • Well-ordered (1 0 0) InAs surfaces using wet chemical treatments (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.susc.2004.07.047 (literal)
Alternative label
  • O.E. Tereshchenko; E. Placidi; D. Paget; P. Chiaradia; A. Balzarotti (2004)
    Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
    in Surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • O.E. Tereshchenko; E. Placidi; D. Paget; P. Chiaradia; A. Balzarotti (literal)
Pagina inizio
  • 237 (literal)
Pagina fine
  • 244 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0039602804010416 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 570 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • ISI Web of Science (WOS), Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Institute of Semiconductor Physics, Nonequilibrium Processes in Semiconductors, Novosibirsk State University, Lavrentiev Av. 13, 630090 Novosibirsk, Russia Dipartimento di Fisica and INFM, Università di Roma Tor Vergata, 00133 Roma, Italy Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau cedex, France (literal)
Titolo
  • Well-ordered (1 0 0) InAs surfaces using wet chemical treatments (literal)
Abstract
  • Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (1 0 0) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the ?2(2 × 4)/c(2 × 8) and (4 × 2)/c(8 × 2) ones after annealing to 330 °C and 410 °C, respectively. At the intermediate temperature of 370 °C, an ?2(2 × 4)/(4 × 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (1 0 0) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way. (literal)
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