http://www.cnr.it/ontology/cnr/individuo/prodotto/ID180283

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (Articolo in rivista) (literal)

Anno

2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1016/j.nima.2005.05.039 (literal)

Alternative label

Fretwurst E.; Adey J.; Al-Ajili A.; Alfieri G.; Allport P.P.; Artuso M.; Assouak S.; Avset B.S.; Barabashi L.; Barcz A.; Bates R.; Biagi S.F.; Bilei G.M.; Bisello D.; Blue A.; Blumenau A.; Boisvert V.; Bolla G.; Bondarenko G.; Borchi E.; Borrello L.; Bortoletto D.; Boscardin M.; Bosisio L.; Bowcock T.J.V.; Brodbeck T.J.; Broz J.; Bruzzi M.; Brzozowski A.; Buda M.; Buhmann P.; Buttar C.; Campabadal F.; Campbell D.; Candelori A.; Casse G.; Cavallini A.; Charron S.; Chilingarov A.; Chren D.; Cindro V.; Collins P.; Coluccia R.; Contarato D.; Coutinho J.; Creanza D.; Cunningham L.; Dalla Betta G.F.; Dawson I.; de Boer W.; De Palma M.; Demina R.; Dervan P.; Dittongo S.; Dolezal Z.; Dolgolenko A.; Eberlein T.; Eremin V. Fall C. Fasolo F.; Ferbel T.; Fizzotti F.; Fleta C.; Focardi E.; Forton E.; Garcia C.; Garcia-Navarro J.E.; Gaubas E.; Genest M.H.; Gill K.A.; Giolo K.; Glaser M.; Goessling C.; Golovine V.; Sevilla S.G.; Gorelov I.; Goss J.; Bates A.G.; Gregoire G.; Gregori P.; Grigoriev E.; Grillo A.A.; Groza A.; Guskov J.; Haddad L.; Harkonen J.; Hauler F.; Hoeferkamp M.; Honniger F.; Horazdovsky T.; Horisberger R.; Horn M.; Houdayer A.; Hourahine B.; Hughes G.; Ilyashenko I.; Irmscher K.; Ivanov A.; Jarasiunas K.; Johansen K.M.H.; Jones B.K.; Jones R.; Joram C.; Jungermann L.; Kalinina E.; Kaminski P.; Karpenko A.; Karpov A.; Kazlauskiene V.; Kazukauskas V.; Khivrich V.; Khomenkov V.; Kierstead J.; Klaiber-Lodewigs J.; Klingenberg R.; Kodys P.; Kohout Z.; Korjenevski S.; Koski M.; Kozlowski R.; Kozodaev M.; Kramberger G.; Krasel O.; Kuznetsov A.; Kwan S.; Lagomarsino S.; Lassila-Perini K.; Lastovetsky V.; Latino G.; Lazanu I.; Lazanu S.; Lebedev A.; Lebel C.; Leinonen K.; Leroy C.; Li Z.; Lindstrom G.; Linhart V.; Litovchenko P.; Litovchenko A.; Giudice A.L.; Lozano M.; Luczynski Z.; Luukka P.; Macchiolo A.; Makarenko L.F.; Mandic I.; Manfredotti C.; Manna N.; Garcia S.M.; Marunko S.; Mathieson K.; Melone J.; Menichelli D.; Messineo A.; Metcalfe J.; Miglio S.; Mikuz M.; Miyamoto J.; Moll M.; Monakhov E.; Moscatelli F.; Naoumov D.; Nossarzewska-Orlowska E.; Nysten J.; Olivero P.; Oshea V.; Palviainen T.; Paolini C.; Parkes C.; Pesseri D.; Pein U.; Pellegrini G.; Perera L.; Petasecca M.; Plemonte C.; Pignatel G.U.; Pinho N.; Pintilie I.; Pintilie L.; Polivtsev L.; Polozov P.; Popa A.; Popule J.; Pospisil S.; Pozza A.; Radicci V.; Rafi JM.; Rando R.; Roeder R.; Rohe T.; Ronchin S.; Rott C.; Roy A.; Ruzin A.; Sadrozinski HFW.; Sakalauskas S.; Scaringella M.; Schiavulli L.; Schnetzer S.; Schumm B.; Sciortino S.; Scorzoni A.; Segneri G.; Seidel S.; Seiden A.; Sellberg G.; Sellin P.; Sentenac D.; Shipsey I.; Sicho P.; Sloan T.; Solar M.; Son S.; Sopko B.; Sopko V.; Spencer N.; Stahl J.; Stolze D.; Stone R.; Storasta J.; Strokan N.; Sudzius M.; Surma B.; Suvorov A.; Svensson B.G.; Tipton P.; Tomasek M.; Tsvetkov A.; Tuominen E.; Tuovinen E.; Tuuva T.; Tylchin M.; Uebersee H.; Uher J.; Ullan M.; Vaitkus JV.; Velthuis J.; Verbitskaya E.; Vrba V.; Wagner G.; Wilhelm I.; Worm S.; Wright V.; Wunstorf R.; Yiuri Y.; Zabierowski P.; Zaluzhny A.; Zavrtanik M.; Zen M.; Zhukov V.; Zorzi N. (2005)
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; Elsevier BV, Amsterdam (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Fretwurst E.; Adey J.; Al-Ajili A.; Alfieri G.; Allport P.P.; Artuso M.; Assouak S.; Avset B.S.; Barabashi L.; Barcz A.; Bates R.; Biagi S.F.; Bilei G.M.; Bisello D.; Blue A.; Blumenau A.; Boisvert V.; Bolla G.; Bondarenko G.; Borchi E.; Borrello L.; Bortoletto D.; Boscardin M.; Bosisio L.; Bowcock T.J.V.; Brodbeck T.J.; Broz J.; Bruzzi M.; Brzozowski A.; Buda M.; Buhmann P.; Buttar C.; Campabadal F.; Campbell D.; Candelori A.; Casse G.; Cavallini A.; Charron S.; Chilingarov A.; Chren D.; Cindro V.; Collins P.; Coluccia R.; Contarato D.; Coutinho J.; Creanza D.; Cunningham L.; Dalla Betta G.F.; Dawson I.; de Boer W.; De Palma M.; Demina R.; Dervan P.; Dittongo S.; Dolezal Z.; Dolgolenko A.; Eberlein T.; Eremin V. Fall C. Fasolo F.; Ferbel T.; Fizzotti F.; Fleta C.; Focardi E.; Forton E.; Garcia C.; Garcia-Navarro J.E.; Gaubas E.; Genest M.H.; Gill K.A.; Giolo K.; Glaser M.; Goessling C.; Golovine V.; Sevilla S.G.; Gorelov I.; Goss J.; Bates A.G.; Gregoire G.; Gregori P.; Grigoriev E.; Grillo A.A.; Groza A.; Guskov J.; Haddad L.; Harkonen J.; Hauler F.; Hoeferkamp M.; Honniger F.; Horazdovsky T.; Horisberger R.; Horn M.; Houdayer A.; Hourahine B.; Hughes G.; Ilyashenko I.; Irmscher K.; Ivanov A.; Jarasiunas K.; Johansen K.M.H.; Jones B.K.; Jones R.; Joram C.; Jungermann L.; Kalinina E.; Kaminski P.; Karpenko A.; Karpov A.; Kazlauskiene V.; Kazukauskas V.; Khivrich V.; Khomenkov V.; Kierstead J.; Klaiber-Lodewigs J.; Klingenberg R.; Kodys P.; Kohout Z.; Korjenevski S.; Koski M.; Kozlowski R.; Kozodaev M.; Kramberger G.; Krasel O.; Kuznetsov A.; Kwan S.; Lagomarsino S.; Lassila-Perini K.; Lastovetsky V.; Latino G.; Lazanu I.; Lazanu S.; Lebedev A.; Lebel C.; Leinonen K.; Leroy C.; Li Z.; Lindstrom G.; Linhart V.; Litovchenko P.; Litovchenko A.; Giudice A.L.; Lozano M.; Luczynski Z.; Luukka P.; Macchiolo A.; Makarenko L.F.; Mandic I.; Manfredotti C.; Manna N.; Garcia S.M.; Marunko S.; Mathieson K.; Melone J.; Menichelli D.; Messineo A.; Metcalfe J.; Miglio S.; Mikuz M.; Miyamoto J.; Moll M.; Monakhov E.; Moscatelli F.; Naoumov D.; Nossarzewska-Orlowska E.; Nysten J.; Olivero P.; Oshea V.; Palviainen T.; Paolini C.; Parkes C.; Pesseri D.; Pein U.; Pellegrini G.; Perera L.; Petasecca M.; Plemonte C.; Pignatel G.U.; Pinho N.; Pintilie I.; Pintilie L.; Polivtsev L.; Polozov P.; Popa A.; Popule J.; Pospisil S.; Pozza A.; Radicci V.; Rafi JM.; Rando R.; Roeder R.; Rohe T.; Ronchin S.; Rott C.; Roy A.; Ruzin A.; Sadrozinski HFW.; Sakalauskas S.; Scaringella M.; Schiavulli L.; Schnetzer S.; Schumm B.; Sciortino S.; Scorzoni A.; Segneri G.; Seidel S.; Seiden A.; Sellberg G.; Sellin P.; Sentenac D.; Shipsey I.; Sicho P.; Sloan T.; Solar M.; Son S.; Sopko B.; Sopko V.; Spencer N.; Stahl J.; Stolze D.; Stone R.; Storasta J.; Strokan N.; Sudzius M.; Surma B.; Suvorov A.; Svensson B.G.; Tipton P.; Tomasek M.; Tsvetkov A.; Tuominen E.; Tuovinen E.; Tuuva T.; Tylchin M.; Uebersee H.; Uher J.; Ullan M.; Vaitkus JV.; Velthuis J.; Verbitskaya E.; Vrba V.; Wagner G.; Wilhelm I.; Worm S.; Wright V.; Wunstorf R.; Yiuri Y.; Zabierowski P.; Zaluzhny A.; Zavrtanik M.; Zen M.; Zhukov V.; Zorzi N. (literal)

Pagina inizio

7 (literal)

Pagina fine

19 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

552 (literal)

Rivista

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

13 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

1-2 (literal)

Note

ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

a - Institute for Experimental Physics, University of Hamburg, Germany, b - Department of Physics, University of Exeter, Exeter, EX4 4QL, UK, c - Department of Physics & Astronomy, Glasgow University, Glasgow, UK, d - Physics Department/Physical Electronics, University of Oslo, Oslo, Norway, e - Department of Physics, University of Liverpool, UK, f - Experimental Particle Physics Group, Syracuse University, Syracuse, USA, g - Universite´ catholique de Louvain, Institut de Physique Nucle´aire, Louvain-la-Neuve, Belgium, h - SINTEF ICT P.O. Box 124 Blindern N-0314 Oslo, Norway, i - Institute for Nuclear Research of the Academy of Sciences of Ukraine, Radiation Physics Departments, j - Institute of Physics PAS and Institute of Electronics Technology, Warszawa, Poland, k - I.N.F.N. and Universita` di Perugia--Italy, l - Dipartimento di Fisica and INFN Sezione di Padova, Via Marzolo 8, I-35131, Padova, Italy, m - University of Rochester, n - Purdue University, USA, o - State Scientific Center of Russian Federation, Institute for Theoretical and Experimental Physics, Moscow, Russia, p - INFN Florence--Department of Energetics, University of Florence, Italy, q - Universita' di Pisa and INFN sez. di Pisa, Italy, r - ITC-IRST, Microsystems Division, Povo, Trento, Italy, s - Universita di Trieste & I.N.F.N.-Sezione di Trieste, Italy, t - Department of Physics, Lancaster University, Lancaster, UK, u - Charles University Prague, Czech Republic, v - Institute of Electronic Materials Technology, Warszawa, Poland, w - National Institute for Materials Physics, Bucharest--Magurele, Romania (literal)

Titolo

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (literal)

Abstract

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10^(16) hadrons/cm^2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed. (literal)

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