The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering (Articolo in rivista)

Type
Label
  • The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jlumin.2006.07.018 (literal)
Alternative label
  • Miritello, M.; Lo Savio, R.; Iacona, F.; Franzo, G.; Bongiorno, C.; Irrera, A.; Priolo, F. (2006)
    The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering
    in Journal of luminescence
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Miritello, M.; Lo Savio, R.; Iacona, F.; Franzo, G.; Bongiorno, C.; Irrera, A.; Priolo, F. (literal)
Pagina inizio
  • 233 (literal)
Pagina fine
  • 237 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 121 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • # a MATIS CNR-INFM and Dipartimento di Fisica e Astronomia dell'Università di Catania, via Santa Sofia 64, 95123 Catania, Italy # b CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy (literal)
Titolo
  • The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering (literal)
Abstract
  • The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it