http://www.cnr.it/ontology/cnr/individuo/prodotto/ID179843
Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation (Articolo in rivista)
- Type
- Label
- Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2220719? (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- M. Ferri; S. Solmi; D. Nobili; A. Armigliato (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM Institute, Via Gobetti 101, 40129 Bologna, Italy (literal)
- Titolo
- Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation (literal)
- Abstract
- The effects of 2 MeV Si+ implantation on silicon-on-insulator layers uniformly doped with B at
concentrations 1.0 and 1.8?1020 cm-3, and the kinetics of damage recovery were investigated by
carrier density, mobility measurements, and transmission electron microscopy ?TEM? observations.
High energy implantation reduces the hole density by about 98%; the mobility is also reduced at an
extent which increases with B concentration. Isochronal and isothermal annealings show that
recovery of the hole density takes place in three stages: the first stage ??? is accompanied by a
mobility decrease and is followed by the second stage ??? where mobility increases attaining values
close to the ones of the reference undamaged samples. Mobility keeps nearly constant in the third
recovery stage ???, which takes place above 800 °C. As a characterizing feature the mobility values
for each B concentration only depend on the hole density, irrespective of the thermal history of the
samples. Experiments and TEM observations allowed us to distinguish defect recovery from SiB3
precipitation, which can take place at temperatures higher than 700 °C. Recovery stages are
discussed, and it is concluded that dissolution of B rich clusters in stage ??? modifies the
concentration, or the charge state, of the defects responsible of the second ??? stage. These defects
are identified as boron interstitial clusters in consideration of their mobility behavior and of the
activation energy E? for their recovery process, which results to be 3±0.2 eV. (literal)
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