Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3659688 (literal)

Alternative label

• A. Molle, L. Lamagna, C. Grazianetti, G. Brammertz, C. Merckling, M. Caymax, S. Spiga, M. Fanciull (2011)
  Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
  in Applied physics letters (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Molle, L. Lamagna, C. Grazianetti, G. Brammertz, C. Merckling, M. Caymax, S. Spiga, M. Fanciull (literal)

Pagina inizio

• 193505 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy; IMEC, Kapeldreef 75, 3001 Leuven, Belgium; Dipartimento di Scienza dei Materiali, Universita` degli Studi di Milano Bicocca, Milano, Italy (literal)

Titolo

• Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition (literal)

Abstract

• Tuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (2?4) and (4?2) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al2O3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (4?2) In0.53Ga0.47As reconstruction. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARCO FANCIULLI (Unità di personale esterno)
• SABINA SPIGA (Persona)
• LUCA LAMAGNA (Persona)
• ALESSANDRO MOLLE (Persona)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• ALESSANDRO MOLLE (Persona)
• MARCO FANCIULLI (Unità di personale esterno)
• LUCA LAMAGNA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)