http://www.cnr.it/ontology/cnr/individuo/prodotto/ID179811
Damage and recovery in arsenic doped silicon after high energy Si+ implantation (Articolo in rivista)
- Type
- Label
- Damage and recovery in arsenic doped silicon after high energy Si+ implantation (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.1787140 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- S. Solmi; M. Ferri; D. Nobili;M. Bianconi (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Solmi cnr-Imm Bologna
Ferri cnr-Imm Bologna
Bianconi cnr-Imm Bologna
Nobili cnr-Imm Bologna (literal)
- Titolo
- Damage and recovery in arsenic doped silicon after high energy Si+ implantation (literal)
- Abstract
- Electrical measurements were used to study the irradiation effects and the annealing behavior of
heavily As doped silicon on insulator samples implanted with 2 MeV Si+ ions. It is found that
implantation induces a strong reduction of the carrier density, which markedly depends on the
concentration of As. Annealing at temperatures in the range 600-800 °C, by rapid thermal
treatments or heating in furnace, showed that recovery takes place in two stages. The kinetics of the
former, which should involve point defect-dopant complexes or small defect clusters, is rapid, while
more stable defects demanding prolonged heating recover in the latter stage. It is concluded that
these more stable defects should originate by the aggregation with an Ostwald ripening mechanism
of the dopant-defect complexes and small point defect clusters, a phenomenon which competes with
their annihilation. These processes, which ultimately determine the carrier density trapped in the
stable defects, can also partially take place under the Si+ implantation. The effects of irradiation
dose, temperature of the samples in the course of the irradiation, dopant concentration, and
annealing temperature on defect structure and carrier concentration are reported and discussed. (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi