Light amplification in silicon nanocrystals by pump and probe transmission measurements (Articolo in rivista)

Type
Label
  • Light amplification in silicon nanocrystals by pump and probe transmission measurements (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1803613 (literal)
Alternative label
  • Dal Negro L; Cazzanelli M; Danese B; Pavesi L; Iacona F; Franzo G; Priolo F (2004)
    Light amplification in silicon nanocrystals by pump and probe transmission measurements
    in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dal Negro L; Cazzanelli M; Danese B; Pavesi L; Iacona F; Franzo G; Priolo F (literal)
Pagina inizio
  • 5747 (literal)
Pagina fine
  • 5755 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 10 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Università di Trento & INFM, Trento CNR, IMM, Sez Catania, Catania Università di Catania & INFM, Catania (literal)
Titolo
  • Light amplification in silicon nanocrystals by pump and probe transmission measurements (literal)
Abstract
  • Net optical gain in silicon nanocrystals (Si-nc) has been measured by pump and probe transmission experiments. Si-nc active layers have been produced by plasma enhanced chemical vapor deposition on transparent quartz substrates. Continuous and pulsed pump and probe transmission measurements have shown clear evidences of net probe amplification with fast (nanosecond) response time. Transfer matrix and rate equations modeling of the nonlinear signal transmission allowed to extract the gain spectra for different pump intensities yielding good qualitative agreement with the experimental data. Gain cross sections per nanocrystals of the order of 3x10(-16) cm(2) have been deduced. The physical origin of the optical amplification is interpreted within a four level recombination model describing the dynamics of strongly localized excitons at the Si-nc/SiO(2) interface. (literal)
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