http://www.cnr.it/ontology/cnr/individuo/prodotto/ID179006

Parallel-local anodic oxidation of silicon surfaces by soft stamps (Articolo in rivista)

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Parallel-local anodic oxidation of silicon surfaces by soft stamps (Articolo in rivista) (literal)

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Cristiano Albonetti; Javier Martinez; Nuria S Losilla; Pierpaolo Greco; Massimiliano Cavallini; Francesco Borgatti; Monica Montecchi; Luca Pasquali; Ricardo Garcia; Fabio Biscarini (2008)
Parallel-local anodic oxidation of silicon surfaces by soft stamps
in Nanotechnology (Bristol. Print); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
(literal)

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Cristiano Albonetti; Javier Martinez; Nuria S Losilla; Pierpaolo Greco; Massimiliano Cavallini; Francesco Borgatti; Monica Montecchi; Luca Pasquali; Ricardo Garcia; Fabio Biscarini (literal)

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CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, I-40129 Bologna, Italy; CSIC-Instituto de Microelectrónica de Madrid (IMM), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain; CSIC-Instituto de Microelectrónica de Madrid (IMM), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain; CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, I-40129 Bologna, Italy; CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, I-40129 Bologna, Italy; CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, I-40129 Bologna, Italy; Ingegneria dei Materiali e dell'Ambiente, Università di Modena e Reggio Emilia, Via Vignolese 905, I-41100 Modena, Italy; Ingegneria dei Materiali e dell'Ambiente, Università di Modena e Reggio Emilia, Via Vignolese 905, I-41100 Modena, Italy; CSIC-Instituto de Microelectrónica de Madrid (IMM), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain; CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, I-40129 Bologna, Italy (literal)

Titolo

Abstract

We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps. This method yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale. To implement this technique, we built a machine to bring the metallized polydimethylsiloxane stamp in contact with the silicon surface, subsequently inserted in a sealed chamber with controlled relative humidity. The oxide nanostructures are fabricated when a bias voltage of 36 V is applied between the stamp and the silicon for 2 min, with a relative humidity of 90%. The flexibility of the stamp enables a homogeneous conformal contact with the silicon surface, resulting in an excellent reproducibility of the process. Moreover, by means of two subsequent oxidations with the same stamp and just rotating the sample, we are able to fabricate complex nanostructures. Finally, a detailed study of the oxidation mechanism, also using a finite element analysis, has been performed to understand the underlying mechanism. (literal)

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