Nanoscale manipulation of Ge nanowires by ion irradiation (Articolo in rivista)

Type
Label
  • Nanoscale manipulation of Ge nanowires by ion irradiation (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3267154 (literal)
Alternative label
  • Lucia Romano (1); Nicholas G. Rudawski (2); Monta R. Holzworth (2); Kevin S. Jones (2); S. G. Choi (3); S. T. Picraux (3) (2009)
    Nanoscale manipulation of Ge nanowires by ion irradiation
    in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lucia Romano (1); Nicholas G. Rudawski (2); Monta R. Holzworth (2); Kevin S. Jones (2); S. G. Choi (3); S. T. Picraux (3) (literal)
Pagina inizio
  • 114316-1 (literal)
Pagina fine
  • 114316-6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 106 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Department of Physics and Astronomy, University of Catania and MATIS CNR-INFM, 64 Via S. Sofia, I-95123 Catania, Italy 2Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA 3Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA (literal)
Titolo
  • Nanoscale manipulation of Ge nanowires by ion irradiation (literal)
Abstract
  • Nanowires have generated considerable interest as nanoscale interconnects and as active components of both electronic and electromechanical devices. However, in many cases, manipulation and modification of nanowires are required to fully realize their potential. It is essential, for instance, to control the orientation and positioning of nanowires in some specific applications. This work demonstrates a simple method to reversibly control the shape and the orientation of Ge nanowires using ion beams. Crystalline nanowires were amorphized by 30 keV Ga(+) implantation. Subsequently, viscous flow and plastic deformation occurred causing the nanowires to bend toward the beam direction. The bending was reversed multiple times by ion implanting the opposite side of the nanowires, resulting in straightening and subsequent bending into that opposite direction. This effect demonstrates the detailed manipulation of nanoscale structures is possible through the use of ion irradiation. (literal)
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