http://www.cnr.it/ontology/cnr/individuo/prodotto/ID178944

Effect of strain on the carrier mobility in heavily doped p-type Si (Articolo in rivista)

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Label

Effect of strain on the carrier mobility in heavily doped p-type Si (Articolo in rivista) (literal)

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Alternative label

Lucia Romano (1); Alberto Maria Piro (1); Maria Grazia Grimaldi (1); Gabriele Bisognin (2); Enrico Napolitani (2); Davide De Salvador (2) (2006)
Effect of strain on the carrier mobility in heavily doped p-type Si
in Physical review letters (Print); American Physical Society (APS), College Pk (Stati Uniti d'America)
(literal)

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Lucia Romano (1); Alberto Maria Piro (1); Maria Grazia Grimaldi (1); Gabriele Bisognin (2); Enrico Napolitani (2); Davide De Salvador (2) (literal)

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(1) CNR-MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy (2) CNR-MATIS and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, I-35131 Padova, Italy (literal)

Titolo

Abstract

We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2x10(20) cm(-3) concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found. (literal)

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