Lattice location and thermal evolution of small B complexes in crystalline Si (Articolo in rivista)

Type
Label
  • Lattice location and thermal evolution of small B complexes in crystalline Si (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2130719 (literal)
Alternative label
  • L. Romano; A. M. Piro; S. Mirabella; M. G. Grimaldi; E. Rimini (2005)
    Lattice location and thermal evolution of small B complexes in crystalline Si
    in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. Romano; A. M. Piro; S. Mirabella; M. G. Grimaldi; E. Rimini (literal)
Pagina inizio
  • 201905-1 (literal)
Pagina fine
  • 201905-3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 20 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • MATIS--INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy (literal)
Titolo
  • Lattice location and thermal evolution of small B complexes in crystalline Si (literal)
Abstract
  • The lattice location of B in Si has been investigated by channelling analyses using nuclear reactions (650 keV proton beam, B-11(p,alpha)Be-8). The formation at room temperature of a specific, small B complex in presence of an excess of point defects has been inferred. In particular, B implanted in Si or B substitutional dissolved in Si and irradiated with proton beam form a unique B complex with B atoms not randomly located. The angular scans along the < 100 > and < 110 > axes are compatible with B-B pairs aligned along the < 100 > axis. The thermal annealing in the 200-950 degrees C range of the B complexes, analyzed by lattice location and carrier concentration measurements, depends on the residual defect density in the lattice. The B complexes dissolve at low temperature if no excess of Si self-interstitials (Is) exists or they evolve into large B clusters and then dissolve at high temperature if Is supersaturation holds. (literal)
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