Room-temperature boron displacement in crystalline silicon induced by proton irradiation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Room-temperature boron displacement in crystalline silicon induced by proton irradiation (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1868874 (literal)

Alternative label

• A. M. Piro; L. Romano; S. Mirabella; M. G. Grimaldi (2005)
  Room-temperature boron displacement in crystalline silicon induced by proton irradiation
  in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. M. Piro; L. Romano; S. Mirabella; M. G. Grimaldi (literal)

Pagina inizio

• 081906-1 (literal)

Pagina fine

• 081906-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 86 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 8 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• MATIS - INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy (literal)

Titolo

• Room-temperature boron displacement in crystalline silicon induced by proton irradiation (literal)

Abstract

• The effect induced by proton irradiation on B-doped crystalline Si at room temperature is investigated in detail. The displacement of B atoms out of substitutional lattice sites is shown to be induced at room temperature by proton irradiation at energies ranging between 300 and 1300 keV This phenomenon was studied by means of channeling and nuclear reaction analysis techniques using the B-11(p, alpha)Be-8 nuclear reaction at 650. keV proton energy. For all the irradiation energies used, the fraction of displaced B atoms increases exponentially with proton irradiation fluence until saturation occurs. The B displacement rate strongly increases by decreasing the irradiation energy. We show that B off-lattice displacement is not due to a direct interaction of the proton beam with B atoms, but to the Si self-interstitials (I-Si) generated in the lattice by the irradiating beam. The displacement results from the formation of a mobile B-I-Si pair when a I-Si is trapped by a substitutional B. The measured damage rate has been interpreted in terms of the I-Si-B substitutional trapping probability and the resulting cross section at room temperature is (1.00 +/- 0.05) x 10(-16) cm(2). (literal)

Editore

• American Institute Of Physics (AIP) (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Autore CNR

• MARIA GRAZIA GRIMALDI (Persona)
• LUCIA ROMANO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Room-temperature boron displacement in crystalline silicon induced by proton irradiation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Autore CNR di

• SALVATORE MIRABELLA (Unità di personale interno)
• MARIA GRAZIA GRIMALDI (Persona)
• LUCIA ROMANO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Editore di

• American Institute Of Physics (AIP) (Editore)

Insieme di parole chiave di

• Keywords of "Room-temperature boron displacement in crystalline silicon induced by proton irradiation" (Insieme di parole chiave)