http://www.cnr.it/ontology/cnr/individuo/prodotto/ID178843
Localized Electronic Excitations in NiO Studied with Resonant Inelastic X-Ray Scattering at the NiMThreshold: Evidence of Spin Flip (Articolo in rivista)
- Type
- Label
- Localized Electronic Excitations in NiO Studied with Resonant Inelastic X-Ray Scattering at the NiMThreshold: Evidence of Spin Flip (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevLett.95.197402 (literal)
- Alternative label
Chiuzbaian, S. G.; Ghiringhelli, G.; Dallera, C.; Grioni, M.; Amann, P.; Wang, X.; Braicovich, L.; Patthey, L. (2005)
Localized Electronic Excitations in NiO Studied with Resonant Inelastic X-Ray Scattering at the NiMThreshold: Evidence of Spin Flip
in Physical review letters; American Physical Society (APS), College Pk (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Chiuzbaian, S. G.; Ghiringhelli, G.; Dallera, C.; Grioni, M.; Amann, P.; Wang, X.; Braicovich, L.; Patthey, L. (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
INFM-Dipartimento di Fisica, Politecnico di Milano, p. Leonardo da Vinci 32, 20133 Milano, Italy
IPN, Ecole Polytechnique Fe´de´rale, CH-1015 Lausanne, Switzerland (literal)
- Titolo
- Localized Electronic Excitations in NiO Studied with Resonant Inelastic X-Ray Scattering at the NiMThreshold: Evidence of Spin Flip (literal)
- Abstract
- We studied the neutral electronic excitations of NiO localized at the Ni sites by measuring the resonant
inelastic x-ray scattering (RIXS) spectra at the Ni M2;3 edges. The good energy resolution allows an
unambiguous identification of several spectral features due to dd excitations. The dependence of the RIXS
spectra on the excitation energy gives evidence of local spin flip and yields a value of 125 ? 15 meV for
the antiferromagnetic exchange interaction. Accurate crystal field parameters are also obtained. (literal)
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