Electronic transport in field-effect transistors of sexithiophene (Articolo in rivista)

Type
Label
  • Electronic transport in field-effect transistors of sexithiophene (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1789279 (literal)
Alternative label
  • P. Stallinga1, H. L. Gomes1, F. Biscarini2, M. Murgia2, and D. M. de Leeuw3 (2004)
    Electronic transport in field-effect transistors of sexithiophene
    in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Stallinga1, H. L. Gomes1, F. Biscarini2, M. Murgia2, and D. M. de Leeuw3 (literal)
Pagina inizio
  • 5277 (literal)
Pagina fine
  • 5283 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Universidade do Algarve, Faculdade de Ciências e Tecnologia, Campus de Gambelas, P-8000 Faro, Portugal 2CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P. Gobetti 101, I-40129 Bologna, Italy 3Philips Research, Prof. Holstlaan 4, NL-5656 AA Eindhoven, The Netherlands (literal)
Titolo
  • Electronic transport in field-effect transistors of sexithiophene (literal)
Abstract
  • The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of \"variable-range hopping\" and \"multi-trap-and-release\". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics. (literal)
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