Bias-induced threshold voltages shifts in thin-film organic transistors (Articolo in rivista)

Type
Label
  • Bias-induced threshold voltages shifts in thin-film organic transistors (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1713035 (literal)
Alternative label
  • H. L. Gomes1, P. Stallinga1, F. Dinelli2, M. Murgia2, F. Biscarini2, D. M. de Leeuw3, T. Muck4, J. Geurts4, L. W. Molenkamp4, and V. Wagner5 (2004)
    Bias-induced threshold voltages shifts in thin-film organic transistors
    in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • H. L. Gomes1, P. Stallinga1, F. Dinelli2, M. Murgia2, F. Biscarini2, D. M. de Leeuw3, T. Muck4, J. Geurts4, L. W. Molenkamp4, and V. Wagner5 (literal)
Pagina inizio
  • 3184 (literal)
Pagina fine
  • 3186 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 16 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1University of Algarve, Faculty of Sciences and Technology, Campus de Gambelas, 8000 Faro, Portugal 2CNR-Istituto per lo Studio dei Materiali Nanostrutturati, Via P. Gobetti 101, I-40129 Bologna, Italy 3Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, Netherlands 4Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, 97074 Würzburg, Germany 5School of Engineering and Science, International University Bremen, Campus Ring 8, 28759 Bremen, Germany. (literal)
Titolo
  • Bias-induced threshold voltages shifts in thin-film organic transistors (literal)
Abstract
  • An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on ?-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T ? 220 K and the other at T ? 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.(C) 2004 American Institute of Physics. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it