Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3679395 (literal)

Alternative label

• Ruggeri R, Neri F, Sciuto A, Privitera V, Spinella C, Mannino G (2012)
  Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ruggeri R, Neri F, Sciuto A, Privitera V, Spinella C, Mannino G (literal)

Pagina inizio

• 042104 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apl.aip.org/resource/1/applab/v100/i4/p042104_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 100 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy (literal)

Titolo

• Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment (literal)

Abstract

• We investigated optical, structural, and chemical properties of SiOxNy layers irradiated by CW IR laser during a time lapse of few milliseconds. We observed tunable photoluminescence signal at room temperature in the range 750-950 nm, without Si/SiO2 phase separation, depending on the IR laser power irradiation. Furthermore, no photoluminescence signal was recorded when the IR laser power density was high enough to promote phase separation forming Si quantum dots. By chemical analysis the source of the luminescence signal has been identified in a change of silicon chemical environment induced by IR laser annealing inside the amorphous matrix. (literal)

Prodotto di

• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• Rosa Ruggeri (Persona)
• ANTONELLA SCIUTO (Persona)
• GIOVANNI MANNINO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• VITTORIO PRIVITERA (Persona)

Insieme di parole chiave

• Keywords of "Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• GIOVANNI MANNINO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• Rosa Ruggeri (Persona)
• ANTONELLA SCIUTO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment" (Insieme di parole chiave)