http://www.cnr.it/ontology/cnr/individuo/prodotto/ID177523
Spatially Correlated Charge Transport in Organic Thin Film Transistors (Articolo in rivista)
- Type
- Label
- Spatially Correlated Charge Transport in Organic Thin Film Transistors (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevLett.92.116802 (literal)
- Alternative label
Dinelli, F (1); Murgia, M (1); Levy, P (2); Cavallini, M (1); Biscarini, F (1); de Leeuw, DM (3) (2004)
Spatially Correlated Charge Transport in Organic Thin Film Transistors
in Physical review letters; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Dinelli, F (1); Murgia, M (1); Levy, P (2); Cavallini, M (1); Biscarini, F (1); de Leeuw, DM (3) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) Consiglio Nazionale Delle Ricerche - Ist. Stud. dei Mat. Nanostrutturati, Bologna, Italy; (2) Departamento de Fisica - Centro Atómico Constituyentes, Buenos Aires, Argentina; (3) Philips Research Laboratory - High Tech. Campus 34, Eindhoven, The Netherlands (literal)
- Titolo
- Spatially Correlated Charge Transport in Organic Thin Film Transistors (literal)
- Abstract
- The hole mobility in organic ultrathin film field effect transistors was investigated as a function of the coverage. It was found that the charge carrier mobility rapidly increased with increasing coverage and saturated at a coverage of about two monolayers in the case of layered sexithienyl films. It was also found that the first two molecular layers next to the dielectric interface dominated the charge transport. Using a quantitative analysis it was shown that the second layer was crucial, as it provided efficient percolation pathways for carriers generated in both the first and the second layers. (literal)
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