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Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes (Articolo in rivista)

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Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes (Articolo in rivista) (literal)

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L. Pasquali (1); S. M. Suturin (2); V. P. Ulin (2); N. S. Sokolov (2); G. Selvaggi (1); A. Giglia (3); N. Mahne (3); M. Pedio (3); S. Nannarone (1,3) (2005)
Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes
in Physical review. B, Condensed matter and materials physics (Online); The American Physical Society, Ridge, NY (Stati Uniti d'America)
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L. Pasquali (1); S. M. Suturin (2); V. P. Ulin (2); N. S. Sokolov (2); G. Selvaggi (1); A. Giglia (3); N. Mahne (3); M. Pedio (3); S. Nannarone (1,3) (literal)

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(1) Dipartimento di Ingegneria dei Materiali e dell'Ambiente - Università di Modena e Reggio Emilia; (2) Ioffe Physical-Technical Institute - RAS; (3) INFM-CNR-TASC Laboratory - Area Science Park (literal)

Titolo

Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes (literal)

Abstract

Growth of CaF2 on Si(001) is studied as a function of the substrate temperature during deposition for coverages from fraction of a monolayer (ML) up to several monolayers. Structural and morphological studies using atomic force microscopy, low-energy electron diffraction, and reflection high-energy electron diffraction are combined with measurements of core-level photoemission and x-ray absorption. Bonding between CaF2 molecules and Si(001) substrates is followed by monitoring core-level shifts and x-ray absorption line shape. It is found that a dissociative reaction occurs at high deposition temperatures (~750°C), giving rise to a 1-ML-thick uniform wetting layer, which is bonded with the substrate through Ca atoms. This wetting layer changes the surface periodicity from double domain 2×1+1×2 to single domain 3×1. Three-dimensional CaF2 elongated islands develop on top of the wetting layer, with their (110) planes parallel to the Si surface plane. At temperatures below 600°C no dissociative reaction takes place for CaF2; nanodimensional islands develop in the form of rectangular-based huts. The crystallographic orientation of these islands is parallel to that of the Si(001) substrate. The data are compared to results obtained on CaF2 deposited on Si(111). © 2005 The American Physical Society. (literal)

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